Timeline for Where do mobile electrons come from to form an Inversion Layer in an N-MOSFET?
Current License: CC BY-SA 3.0
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| Mar 16, 2018 at 4:42 | comment | added | next-hack | In an nMOSFET yes, as I wrote at the end of the answer: "Instead, in an nMOSFET, the electrons of the inversion layer are quickly injected by the n++ source ". In a n-MOS capacitor (gate/SiO2/p-type Silicon, i.e. the structure of your figure), instead, there is no source, and in this case, the electrons are generated in the way described in my answer. | |
| Mar 14, 2018 at 22:01 | comment | added | sundar | Actually I discovered after reading Semiconductor physics that the inversion charges (mobile electrons) come from the Source actually. Not from where you have mentioned. Thats why we need a gate source overlap intrinsically. Its in page 107 in High Speed Electronics Book by Professor Schumacher. | |
| Sep 24, 2017 at 21:07 | comment | added | sundar | Thanks for the Answer and the details. Its very helpful. | |
| Sep 24, 2017 at 21:02 | history | edited | next-hack | CC BY-SA 3.0 | deleted 54 characters in body |
| Sep 24, 2017 at 20:54 | history | answered | next-hack | CC BY-SA 3.0 |