How do I calculate the V(ds) voltage loss which a MOSFET introduces into the load circuit given a specific load and V(gs) voltage?
I assumed I could use the V(ds) vs. I(d) diagram for that, but I don't find an intersection for my assumed I(d) current. Am I doing something wrong, do I misinterpret the diagram, or does it mean that the MOSFET is not usable for the task?
Here are the conditions:
The load circuit is a 12V DC circuit with a 12W load, i.e. if it was directly connected to a 12V battery it would draw 1A. For the remainder let's assume it is a 12 Ohm resistive load. The MOSFET is a IRF610 and the gate is driven by a 5V general purpose output (a µC).
The datasheet of the IRF610 gives us
- V(ds,max) = 200 V
- I(d,max) = 3.3 A
- V(gs,max) = +/-20 V
- V(gs,th) = 4.0 V
- R(ds,on) = 1.5 Ohm @ V(gs) = 10V and I(d) = 2A.
From those specs I assume the MOSFET would switch on, if 5V were applied to the gate, as 5V > V(gs,th). Moreover it should no overload as 5 < V(gs,max), 12V < V(ds,max) and 1A < I(d,max).
In order to calculate the voltage drop over the MOSFET, I might use R(ds,on), but R(ds,on) = 1.5 Ohm is measured for the test conditions V(gs) = 10V and I(d) = 2A. In my case V(gs) is only 5V and the current is at most 1A reduced by whatever resistance the MOSFET introduces into the load path.
Anyway, I calculate R(total) = R(load) + R(ds,on) = 12 Ohm + 1.5Ohm = 13.5 Ohm and hence I get 888mA load current, 1,33V drop over the MOSFET and 10.6V remaining for the actual load.
I thought I could be more precise and had a look at the V(ds) vs. I(d) diagram (datasheet, p.3, top-left). I thought this is what this diagram is for. So I used the V(gs)=5 curve, but it never intersects with I(d)=1A. The curve is already horizontal in that area. Does this mean that the V(ds) will be "infinity" (or 12V in my case), i.e. the MOSFET blocks?


